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igbt reverseconductingigbt ihw40n60rf resonantswitchingseries datasheet industrialpowercontrol
2 ihw40n60rf resonantswitchingseries rev.2.6,2015-01-26 reverseconductingigbt features: ?powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly ?trenchstop tm technologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowv cesat ?lowemi ?qualifiedaccordingtojesd-022fortargetapplications ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?inductivecooking ?inverterizedmicrowaveovens ?resonantconverters ?softswitchingapplications keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package ihw40n60rf 600v 40a 1.85v 175c h40rf60 pg-to247-3 g c e g c e
3 ihw40n60rf resonantswitchingseries rev.2.6,2015-01-26 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 g c e g c e
4 ihw40n60rf resonantswitchingseries rev.2.6,2015-01-26 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 600 v dccollectorcurrent,limitedby t vjmax t c =25c t c =100c i c 80.0 40.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 120.0 a turn off safe operating area v ce 600v, t vj 175c, t p =1s - 120.0 a diodeforwardcurrent,limitedby t vjmax t c =25c t c =100c i f 80.0 40.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 120.0 a gate-emitter voltage v ge 20 v powerdissipation t c =25c powerdissipation t c =100c p tot 305.0 152.5 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, junction - case r th(j-c) 0.49 k/w diode thermal resistance, junction - case r th(j-c) 0.49 k/w thermal resistance junction - ambient r th(j-a) 40 k/w g c e g c e
5 ihw40n60rf resonantswitchingseries rev.2.6,2015-01-26 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.50ma 600 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =40.0a t vj =25c t vj =175c - - 1.85 2.30 2.40 - v diode forward voltage v f v ge =0v, i f =40.0a t vj =25c t vj =175c - - 1.75 2.00 2.20 - v gate-emitter threshold voltage v ge(th) i c =0.58ma, v ce = v ge 4.1 4.9 5.7 v zero gate voltage collector current i ces v ce =600v, v ge =0v t vj =25c t vj =175c - - - - 40.0 3000.0 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =40.0a - 24.0 - s integrated gate resistor r g none w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 2400 - output capacitance c oes - 88 - reverse transfer capacitance c res - 68 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =480v, i c =40.0a, v ge =15v - 220.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13.0 - nh switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-off delay time t d(off) - 175 - ns fall time t f - 14 - ns turn-off energy e off - 0.56 - mj t vj =25c, v cc =400v, i c =40.0a, v ge =0.0/15.0v, r g(on) =5.6 w , r g(off) =5.6 w , l s =90nh, c s =67pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e g c e
6 ihw40n60rf resonantswitchingseries rev.2.6,2015-01-26 switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =125c turn-off delay time t d(off) - 205 - ns fall time t f - 23 - ns turn-off energy e off - 0.79 - mj t vj =125c, v cc =400v, i c =40.0a, v ge =0.0/15.0v, r g(on) =5.6 w , r g(off) =5.6 w , l s =90nh, c s =67pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e g c e
7 ihw40n60rf resonantswitchingseries rev.2.6,2015-01-26 figure 1. collectorcurrentasafunctionofswitching frequency ( t vj 175c, d =0.5, v ce =400v, v ge =0/15v, r g =5.6 w ) f ,switchingfrequency[khz] i c ,collectorcurrent[a] 1 10 100 1000 0 20 40 60 80 100 120 140 t c =80 t c =110 figure 2. forwardbiassafeoperatingarea ( d =0, t c =25c, t vj 175c; v ge =15v) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 t p =1s 10s 50s 100s 200s 500s dc figure 3. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 50 100 150 200 250 300 350 figure 4. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 20 40 60 80 g c e g c e
8 ihw40n60rf resonantswitchingseries rev.2.6,2015-01-26 figure 5. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 0 20 40 60 80 100 120 v ge =20v 17v 15v 13v 11v 9v 7v figure 6. typicaloutputcharacteristic ( t vj =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 0 20 40 60 80 100 120 v ge =20v 17v 15v 13v 11v 9v 7v figure 7. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 4 5 6 7 8 9 10 11 12 0 20 40 60 80 100 120 t j =25c t j =175c figure 8. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i c =20a i c =40a i c =80a g c e g c e
9 ihw40n60rf resonantswitchingseries rev.2.6,2015-01-26 figure 9. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =175c, v ce =400v, v ge =0/15v, r g(on) =5.6 w , r g(off) =5.6 w , dynamic test circuit in figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 10 20 30 40 50 60 70 80 10 100 1000 t d(off) t f figure 10. typicalswitchingtimesasafunctionofgate resistance (inductiveload, t vj =175c, v ce =400v, v ge =0/15v, i c =40a,dynamictestcircuitin figure e) r g ,gateresistance[ w ] t ,switchingtimes[ns] 0 10 20 30 40 50 10 100 1000 t d(off) t f figure 11. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =40a, r g(on) =5.6 w , r g(off) =5.6 w ,dynamic test circuit in figure e) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 1000 t d(off) t f figure 12. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.58ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 0 25 50 75 100 125 150 175 1 2 3 4 5 6 7 typ. min. max. g c e g c e
10 ihw40n60rf resonantswitchingseries rev.2.6,2015-01-26 figure 13. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =175c, v ce =400v, v ge =0/15v, r g(on) =5.6 w , r g(off) =5.6 w , dynamic test circuit in figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 10 20 30 40 50 60 70 80 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 e off figure 14. typicalswitchingenergylossesasa functionofgateresistance (inductiveload, t vj =175c, v ce =400v, v ge =0/15v, i c =40a,dynamictestcircuitin figure e) r g ,gateresistance[ w ] e ,switchingenergylosses[mj] 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e off figure 15. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =40a, r g(on) =5.6 w , r g(off) =5.6 w ,dynamic test circuit in figure e) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.50 0.55 0.60 0.65 0.70 0.75 0.80 e off figure 16. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =175c, v ge =0/15v, i c =40a, r g(on) =5.6 w , r g(off) =5.6 w ,dynamic test circuit in figure e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 200 300 400 0.00 0.25 0.50 0.75 1.00 e off g c e g c e
11 ihw40n60rf resonantswitchingseries rev.2.6,2015-01-26 figure 17. typicalgatecharge ( i c =40a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 50 100 150 200 250 0 2 4 6 8 10 12 14 16 120v 480v figure 18. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 10 20 30 10 100 1000 c ies c oes c res figure 19. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.0655 1.4e-4 2 0.1301 1.0e-3 3 0.1899 0.01054274 4 0.1045 0.07949796 figure 20. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.0655 1.4e-4 2 0.1301 1.0e-3 3 0.1899 0.01054274 4 0.1045 0.07949796 g c e g c e
12 ihw40n60rf resonantswitchingseries rev.2.6,2015-01-26 figure 21. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0 1 2 3 4 0 20 40 60 80 100 120 t j =25c t j =175c figure 22. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 25 50 75 100 125 150 175 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 i f =20a i f =40a i f =80a g c e g c e
13 ihw40n60rf resonantswitchingseries rev.2.6,2015-01-26 g c e g c e pg-to247-3
14 ihw40n60rf resonantswitchingseries rev.2.6,2015-01-26 g c e g c e pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce
15 ihw40n60rf resonant switching series rev. 2.6, 2015-01-26 revision history ihw40n60rf previous revision revision date subjects (major changes since last revision) 0.1 2009-06-15 - 0.2 2010-03-02 - 2.3 2010-03-02 - 2.4 2013-12-10 new value ices max limit at 175c 2.5 2014-03-12 storage temp -55...+150c 2.6 2015-01-26 minor changes g c e g c e pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce

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